unisonic technologies co., ltd 5302 npn silicon transistor www.unisonic.com.tw 1 of 4 copyright ? 2010 unisonic technologies co., ltd qw-r213-020.a high voltage npn transistor ? description the utc 5302 is a npn silicon planar transistor and suited to be used in power amplifier applications. ? features * makes efficient anti-saturation operation * low variable storage-time spread * low base drive * very suitable for half bridge light ballast application ? symbol 1 to-251 ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing 5302l-tm3-t 5302G-TM3-T to-251 b c e tube note: pin assignment: b: base c: collector e: emitter 5302l-tm3-t (1)packing type (2)package type (3)lead free (1) t: tube (2) tm3: to-251 (3) g: halogen free, l: lead free
5302 npn silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r213-020.a ? absolute maximum rating (ta=25 , unless otherwise specified) parameter symbol ratings unit collector-base voltage v cbo 800 v collector-emitter voltage v ceo 400 v emitter-base voltage v ebo 10 v collector current i c 2 a collector peak current (tp < 5ms) i cm 4 a base current i b 1 a base peak current (tp < 5ms) i bm 2 a power dissipation (t c 25 ) p d 25 w junction temperature t j +150 storage temperature t stg -65 ~ +150 note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data parameter symbol ratings unit junction to ambient ja 100 /w junction to case jc 5 /w
5302 npn silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r213-020.a ? electrical characteristics (ta = 25 , unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics collector-emitter breakdown voltage bv ceo i c =10ma, i e =0 (note) 400 v collector-base breakdown voltage bv cbo i c =1ma, i b =0 800 v emitter-base breakdown voltage bv ebo i e =1ma, i c =0 10 v collector cutoff current i cbo v cb =800v, i e =0 1 a emitter cutoff current i ebo v eb =9v, i c =0 1 a on characteristics h fe1 v ce =5v, i c =10ma 10 h fe2 v ce =5v, i c =400ma 10 30 dc current gain h fe3 v ce =5v, i c =1a 5 v ce(sat1) i c =0.5a, i b =0.1a (note) 0.5 collector-emitter satu ration voltage v ce(sat2) i c =1a, i b =0.25a (note) 1.1 1.5 v v be(sat1) i c =0.5a, i b =0.1a (note) 1.1 base-emitter satu ration voltage v be(sat2) i c =1a, i b =0.25a (note) 1.2 v switching characteristics turn on time t on 0.15 0.3 s fall time t f 0.2 0.4 s storage time t stg v cc =250v, i c =1a, i b1 =i b2 =0.2a, t p =25us duty cycle<1% 0.5 0.9 s note : pulsed duration = 300 s, duty cycle 2 %
5302 npn silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r213-020.a ? typical characteristics 0 0 collector current vs. bv ceo collector current , i c (ma) collector-emitter brea kdown voltage ,bv ceo (v) 6 12 500 100 200 300 400 2 4 8 10 14 0 0 collector current vs. bv cbo collector current , i c (a) collector-base breakdown voltage ,bv cbo (v) 600 1200 200 400 600 800 1000 200 400 800 1000 1400 600 0 0 emitter current vs. bv ebo emitter current , i e (a) emitter-base breakdown voltage ,bv ebo (v) 60 120 2 20 46 810 12 14 16 18 20 40 80 100 140 utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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